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| 2SC4115S transistor (npn) features power dissipation p d : 0.3 w (tamb=25 ) collector current i cm : 3 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 50a , i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma , i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =50a, i c =0 6 v collector cut-off current i cbo v cb =30v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a dc current gain h fe v ce =2 v, i c = 0.1a 120 560 collector-emitter saturation voltage* v cesat i c = 2a, i b =0.1a 0.5 v transition frequency f t v ce =2v, i c =0.5 a f=100mhz 200 mhz z measured using pulse current classification of h fe rank q r s range 120-270 180-390 270-560 to-92s 1. emitter 2. collector 3. base 123 2SC4115S http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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